Spin field effect logic devices

ABSTRACT

Provided are spin field effect logic devices, the logic devices including: a gate electrode; a channel formed of a magnetic material above the gate electrode to selectively transmit spin-polarized electrons; a source on the channel; and a drain and an output electrode on the channel outputting electrons transmitted from the source. The gate electrode may control a magnetization state of the channel in order to selectively transmit the electrons injected from the source to the channel.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a divisional application of U.S. application Ser.No. 12/654,349, filed Dec. 17, 2009, which claims priority under 35U.S.C. §119 to Korean Patent Application No. 10-2009-0002719 filed onJan. 13, 2009 in the Korean Intellectual Property Office (KIPO). Theentire contents of each of the above-mentioned applications areincorporated herein by reference.

BACKGROUND

1. Field

One or more example embodiments relate to electron spin field effectlogic devices.

2. Description of the Related Art

When semiconductor devices are fabricated in nano-scale, an increasingrate of carrier mobility cannot keep up with the degree of deviceintegration (e.g., the number of devices), and thus, power demand doesnot decrease despite a reduction in device size. In order to address theabove problem, technology using electron spin has been suggested.

A spin transistor is a device that operates by moving electrons based onspin-polarization. Power consumption for moving the electrons may besmall and a turn-on speed may be high. A spin transistor may, forexample, include a source and drain on a channel, separated by a gate.The spin transistor may be configured to transmit electrons having aspin polarization between the source and drain based on whether or not afield effect is present in the channel. A field effect may modulate theamount of spin-polarized current detected at the drain.

Conventional logic circuits using transistors require a large number oftransistors and have a complex structure. When a logic device using aspin field effect is fabricated, the logic device may have a different,simpler structure and the number of components in a logic circuit may bereduced relative to conventional logic circuits.

SUMMARY

One or more example embodiments include spin field effect logic devices.

One or more example embodiments may include a logic device using a spinfield effect, the logic circuit device including: a channel including amagnetic material configured to selectively transmit spin-polarizedelectrons; a source on the channel; a gate electrode on the channel; adrain electrode configured to output electrons transmitted from thesource; an output electrode configured to output electrons transmittedfrom the source.

The gate electrode may be configured to control a magnetization state ofthe channel in order to selectively transmit electrons injected from thesource into the channel, the channel may be configured to selectivelytransmit the spin-polarized electrons which are spin-polarized in afirst direction when the channel is in a first magnetization state, andthe drain and the output electrode may include a magnetic material,wherein the drain may be magnetized in a second direction and the outputelectrode may be magnetized in the first direction. The logic device mayfurther include a tunnel barrier on the channel, wherein the source, thedrain, and the output electrode may be on the tunnel barrier.

The logic device may further include a first tunnel barrier formed onthe channel and a second tunnel barrier formed on the channel, whereintwo of the source, the drain, and the output electrode may be formed onthe first tunnel barrier, and the remainder may be formed on the secondtunnel barrier. The channel may be a half-metal and an energy band gapof the channel may be in the first direction. Each of the drain and theoutput electrode may include a ferromagnetic layer on the tunnel barrierand a metal layer on the ferromagnetic layer. Each of the drain and theoutput electrode may further include an anti-ferromagnetic layer betweenthe ferromagnetic layer and the metal layer.

An input terminal may be connected to the gate electrode and an outputterminal may be connected to the output electrode, and when there is avoltage about equal to or greater than a threshold voltage at the inputterminal, the channel may be in a second magnetization state toselectively transmit electrons which are spin-polarized in the seconddirection, and an output voltage of the output terminal may be low, andwhen there is a ground voltage at the input terminal, a high voltage ofthe output electrode may be detected from the output terminal, and thelogic circuit device may be an inverter circuit device.

A second channel may be on the channel, and the source may be on thechannel and the drain may be on the second channel. A second gateelectrode may be on the second channel, the output electrode may beconnected between the drain and the first voltage source, and the sourceand the drain may be magnetized in the first direction, the gate and thesecond gate electrodes may be configured to control a magnetizationstate of the channel and the second channel respectively, in order toselectively transmit electrons injected from the source into thechannel, and the channel and the second channel may transmit thespin-polarized electrons which are magnetized in a second direction.There may be a first tunnel barrier between the channel and the source,and between the channel and the second channel, and a second tunnelbarrier between the second channel and the drain, and between the secondchannel and the output electrode.

When at least one of the channel and the second channel is magnetized inthe second direction, a resistance between the source and the outputelectrode is a first resistance, when both the channel and the secondchannel are magnetized in the first direction, the resistance is asecond resistance, and a resistance between the first voltage source andthe output electrode is a third resistance having a magnitude betweenthat of the first resistance and the second resistance.

The gate electrode and the second gate electrode may be connected to afirst input terminal and a second input terminal, the output electrodemay be connected to an output terminal, and the logic device may beconfigured such that when voltages about equal to or greater thancorresponding threshold voltages exists at each of the gate electrodeand the second gate electrode, the channel and the second channeltransmit the electrons spin-polarized in the first direction and a firstvoltage related to a first current from the source is output at theoutput terminal, and when a voltage which is smaller than a thresholdvoltage exists in at least one of the first gate electrode and thesecond gate electrode, a second voltage related to a second current fromthe first voltage source may be output, the second voltage may begreater than the first voltage and the logic device may be a NANDcircuit device.

According to example embodiments, a second channel and a third channelmay be on the channel, the gate electrode on the second channelconfigured to control a magnetization direction of the second channel,and a second gate electrode on the third channel and configured tocontrol a magnetization direction of the third channel, the drain and asecond drain respectively on the second channel and the third channel,the source may be formed on the channel separated from the secondchannel and the third channel, a first voltage source may be connectedto the first drain and a second drain in parallel, and the outputelectrode may be connected between the first voltage source and thedrain.

The logic device may further include a third gate electrode on thechannel to control a magnetization direction of the first channel. Thefirst, second, and third channels may be magnetized in the firstdirection. When at least one of the second channel and the third channelis magnetized in the first direction, a resistance between the sourceand the output electrode is a first resistance, when both the firstchannel and the second channel are magnetized in a second direction, theresistance is a second resistance, and a resistance between the firstvoltage source and the output electrode may have a magnitude betweenthat of the first resistance and the second resistance.

The gate electrode and the second gate electrode may be connected to afirst input terminal and a second input terminal, the output electrodemay be connected to an output terminal, and the logic device may beconfigured such that when a potential of the first input terminal andthe second input terminal is about greater than or equal to acorresponding threshold voltage, the channel and the second channel maytransmit the electrons spin-polarized in the second direction and afirst voltage related to a first current from the first voltage sourceis output at the output terminal, and when at least one of the firstinput terminal and the second input terminal has a potential which issmaller than the corresponding threshold voltage, a second voltagerelated to a second current from the source is output at the outputterminal, and the first voltage may be greater than the second voltageand the logic device may be an AND logic device.

The first channel may be magnetized in the first direction, and thesecond and third channels may be magnetized in the second direction thatis opposite to the first direction. When at least one of the secondchannel and the third channel is magnetized in the first direction, aresistance between the source and the output electrode is a firstresistance, when both the first channel and the second channel aremagnetized in the second direction, the resistance is a secondresistance, and a resistance between the first voltage source and theoutput electrode is a third resistance having a magnitude that may bebetween that of the first resistance and the second resistance.

The gate electrode and the second gate electrode may be connected to afirst input terminal and a second input terminal, respectively, theoutput electrode may be connected to an output terminal, and the logicdevice may be configured such that when at least one of the first inputterminal and the second input terminal has a potential about greaterthan or equal to a corresponding threshold voltage, a correspondingchannel transmits the electrons spin-polarized in the first directionand the spin electrons input from the source may correspond to a lowvoltage at the output terminal, and when the first input terminal andthe second input terminal have a voltage which is smaller than thecorresponding threshold voltage, a current from the first voltage sourcecorresponds to a high voltage at the output terminal, and the logiccircuit device may be a NOR circuit device.

Spin field effect logic devices according to example embodiments operatefast and/or at improved speed, and have low and/or improved powerconsumption. The logic devices may have simple configurations.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingbrief description taken in conjunction with the accompanying drawings.FIGS. 1-20 represent non-limiting, example embodiments as describedherein.

FIG. 1 is a cross-sectional diagram of a spin field effect logic deviceaccording to an example embodiment;

FIGS. 2-5 are diagrams illustrating driving principles of the logicdevice shown in FIG. 1;

FIG. 6 is a truth table of the logic device shown in FIG. 1 illustratinginverter characteristics;

FIG. 7 is a cross-sectional diagram of a spin field effect logic deviceand illustrates inverter operation of the device according to an exampleembodiment;

FIGS. 8-10 are cross-sectional diagrams of a spin field effect logicdevice and illustrate NAND operation of the device according to anexample embodiment;

FIG. 11 is a truth table of the logic device shown in FIGS. 8-10illustrating NAND characteristics;

FIGS. 12-14 are perspective diagrams of a spin field effect logic deviceand illustrate AND operation of the device according to an exampleembodiment;

FIG. 15 is a truth table of the logic device of FIGS. 12-14 illustratingAND characteristics;

FIGS. 16-18 are perspective diagrams of a spin field effect logic deviceand illustrate NOR operation of the device according to an exampleembodiment;

FIG. 19 is a truth table of the logic device of FIGS. 16-18 illustratingNOR characteristics; and

FIG. 20 is a perspective diagram of a spin field effect logic device andillustrates AND and NOR operation of the device according to an exampleembodiment.

It should be noted that these Figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. These drawings are not, however, to scale and may notprecisely reflect the precise structural or performance characteristicsof any given embodiment, and should not be interpreted as defining orlimiting the range of values or properties encompassed by exampleembodiments. For example, the relative thicknesses and positioning ofmolecules, layers, regions and/or structural elements may be reduced orexaggerated for clarity. The use of similar or identical referencenumbers in the various drawings is intended to indicate the presence ofa similar or identical element or feature

DETAILED DESCRIPTION

Example embodiments will now be described more fully with reference tothe accompanying drawings, in which example embodiments are shown.Example embodiments may, however, be embodied in many different formsand should not be construed as being limited to the embodiments setforth herein; rather, these embodiments are provided so that thisdisclosure will be thorough and complete, and will fully convey theconcept of example embodiments to those of ordinary skill in the art. Inthe drawings, the thicknesses of layers and regions are exaggerated forclarity. Like reference numerals in the drawings denote like elements,and thus their description will be omitted.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Like numbers indicate like elementsthroughout. As used herein the term “and/or” includes any and allcombinations of one or more of the associated listed items. Other wordsused to describe the relationship between elements or layers should beinterpreted in a like fashion (e.g., “between” versus “directlybetween,” “adjacent” versus “directly adjacent,” “on” versus “directlyon”).

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of example embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

Example embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized embodiments (and intermediate structures) of exampleembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, example embodiments should not be construed aslimited to the particular shapes of regions illustrated herein but areto include deviations in shapes that result, for example, frommanufacturing. For example, an implanted region illustrated as arectangle may have rounded or curved features and/or a gradient ofimplant concentration at its edges rather than a binary change fromimplanted to non-implanted region. Likewise, a buried region formed byimplantation may result in some implantation in the region between theburied region and the surface through which the implantation takesplace. Thus, the regions illustrated in the figures are schematic innature and their shapes are not intended to illustrate the actual shapeof a region of a device and are not intended to limit the scope ofexample embodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments belong. Itwill be further understood that terms, such as those defined incommonly-used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand will not be interpreted in an idealized or overly formal senseunless expressly so defined herein.

FIG. 1 is a cross-sectional diagram of a spin field effect logic device100 according to an example embodiment. Referring to FIG. 1, a gateoxide 112 may be on a gate electrode 110, a channel 120 may be on thegate oxide 112, and a tunnel barrier 122 may be on the channel 120. Asource 130, a drain 140, and an output electrode 150 may be on thetunnel barrier 122, separated from each other. The gate electrode 110may be a conductor (e.g., aluminum (Al) and/or polysilicon). The gateoxide 112 may be an oxide (e.g., silicon oxide). The tunnel barrier 122may be the same material as a material between magnetization layers in atunneling magneto resistivity (TMR) device. For example, the tunnelbarrier 122 may be of MgO or AlOx (e.g., Al2O3).

The source 130 may be a metal layer. When the source 130 is a generalmetal, densities of state (DOS) of an up-spin electron and a down-spinelectron may be about the same. The drain 140 may be a magneticmaterial, for example, a ferromagnetic material. The drain 140 mayinclude a ferromagnetic layer 142 on the tunnel barrier 122 and a metallayer 146 on the ferromagnetic layer 142. The drain 140 may furtherinclude an anti-ferromagnetic layer 144 between the ferromagnetic layer142 and the metal layer 146. The anti-ferromagnetic layer 144 may fix aspin direction of spin-polarized electrons in the ferromagnetic layer142. The output electrode 150 may be a magnetic material, for example, aferromagnetic material. The output electrode 150 may include aferromagnetic layer 152 on the tunnel barrier 122 and a metal layer 156on the ferromagnetic layer 152. The output electrode 150 may furtherinclude an anti-ferromagnetic layer 154 between the ferromagnetic layer152 and the metal layer 156.

A ferromagnetic material may be, for example, a NiFe alloy, CoFe alloy,CoFeB alloy, Fe, Co, Mn, and/or a permalloy. The ferromagnetic layers142 and 152 may have up-spin electrons having higher DOS than that ofthe down-spin electrons. The up-spin electrons and the down-spinelectrons of a general metal may have the same DOS and the source 130may be a general metal. The anti-ferromagnetic layers 144 and 154 may bean anti-ferromagnetic material (e.g., FeMn, PtMn, and/or PtCrMn). Thespin direction of the electrons in the drain 140 and the outputelectrode 150 may be dominant in different directions from each other.

The channel 120 may be, for example, a half-metal, a magneticsemiconductor and/or a ferromagnetic material. For example, the channel120 may be a magnetic oxide (e.g., CrO2, Fe3O4, NiO, and/or TiO2), amagnetic double perovskite structure material, a magnetic Heusler alloy,a magnetic half Heusler alloy, and/or a semiconductor having half-metalcharacteristics. The magnetic double perovskite structure material mayhave, for example, a chemical composition represented as A2BB′O6, whereA is selected from the group consisting of Ca, Sr, and Ba, B is a3d-orbital transition metal such as Fe or Co, and B′ is a 4d-orbitaltransition metal such as Mo or Re. Examples of the magnetic doubleperovskite structure material may include Sr2FeMoO6 and/or Sr2FeReO6.

The magnetic Heusler alloy may be at least one of the compositions X2YZ,X2YZ′, X2Y′Z, X2Y′Z′, where X is at least one of Co, Fe, and Ru, Y is atleast one of Cr and Mn, and Z is at least one of Si, Ge, Sn, Al, Ga, Sb,and Pb. Examples of the magnetic Heusler alloy may include Co2CrAland/or Co2MnSi. The magnetic half-Heusler alloy may be at least one ofNiMnSb, PdMnSb, PtMnSb, CoMnSb, IrMnSb, NiCrSb, FeMnSb, CoCrSb, NiVSb,CoVSb, CoTiSb, NiMnSe, NiMnTe, CoFeSb, NiFeSb, and/or RhMnSb. Thesemiconductor having half-metal characteristics may be at least one ofCrAs, MnAs, and/or CrSe.

The channel 120 may be a dilute magnetic semiconductor material that ismagnetic after doping a transition metal on a semiconductor. The dilutemagnetic semiconductor may be at least one of (In,Mn)As, (Ga,Mn)As,(Zn,Co)O, (Zn,V)O, (Ga,Mn)N, (Ga,Cr)N, (Cd,Mn)GeP2, (Zn,Mn)GeP2,(Ti,Cr)O2, and/or (Zn,Cr)Se. In the parentheses, the fist listedmaterial is a host and the second listed material is a doping material(or substituting material). Additionally, a maganite based semiconductorsuch as NiMnSb, La(1−x)AxMnO3 (A=Ca, Ba, Sr, 0.2<x<0.3) and a transitionmetal doped semiconductor such as Cu doped GaN also may have half-metalcharacteristics.

The channel 120 may be a path of spin electrons between the source 130and the drain 140, and between the source 130 and the output electrode150. The channel 120 may act as a filter that selectively transmits thespin electrons having a certain direction, for example, the up spindirection or the down spin direction, which ma be injected from thesource 130. The channel 120 may be set to pass the spin electrons havingthe same direction as that of the spin electrons of the output electrode150 or the drain 140. The spin direction of electrons that are to betransmitted through the channel 120 may be determined according to agate voltage Vg applied to the gate electrode 110. When the gate voltageVg applied to the gate electrode 110 is greater than a thresholdvoltage, the spin direction of the channel 120 may be inverted and thespin direction of the electrons being transmitted through the channel120 may be changed. The tunnel barrier 122 may help the channel 120filter out electrons having an undesired spin direction that enter thechannel 120 and filters out the electrons having an undesired spindirection which pass from the channel 120 to the drain 140 or the outputelectrode 150.

The spin field effect logic device 100 illustrated in FIG. 1 may includea field effect transistor (FET). The half-metal may have down-spinelectrons and/or up-spin electrons. One type of spin electron, having agap to the Fermi level, may exhibit semiconductor characteristics, andanother type of spin electron may have metal characteristics. Thechannel 120 may be selected so that an energy band gap exists withrespect to a spin direction of the main and/or majority spin electronsin the drain 140.

FIGS. 2-5 are diagrams illustrating driving principles of the logicdevice shown in FIG. 1. Referring to FIG. 2, when the source 130 is ageneral metal layer, the DOS of the up-spin electrons and the DOS of thedown-spin electrons may be about equal to each other. The drain 140 maybe selected so that the up-spin electrons are dominant in the drain 140.The channel 120 may selectively transmit the down-spin electrons becausean energy band gap exists with respect to the up-spin electrons.

When a first voltage V1 (e.g., about 1V) is applied to the drain 140,the down-spin electrons from the source 130 may pass through the channel120. Because the up-spin electrons are dominant in the drain 140, anelectric current is decreased and/or rarely flows to the drain 140.Referring to FIG. 1, the spin of electrons in the channel 120 is in adirection denoted by an arrow A, and the spin direction of the electronsin the channel 120 and the spin direction of the electrons in the drain140 may be anti-parallel with each other.

Referring to FIG. 3, when a threshold voltage (e.g., about 0.5V) isapplied to the gate electrode 110, a conduction band of the up-spinelectrons of the channel 120 may be aligned with the Fermi level E_(F).Referring to FIG. 1, the spin direction of the electrons in the channel120 may be in a direction denoted by an arrow B, and the spin directionof the electrons of the channel 120 and the spin direction of theelectrons of the drain 140 may be parallel to each other. The up-spinelectrons may be transmitted through the channel 120 and flow to thedrain 140.

Referring to FIG. 4, the down-spin electrons may be dominant in theoutput electrode 150. In the channel 120, an energy band gap may existwith respect to the up-spin electrons so that the down-spin electronsmay be selectively transmitted through the channel 120. When a secondvoltage V2 (e.g., about 1 V) is applied to the output electrode 150, thedown-spin electrons from the source 130 may pass through the channel 120and flow to the output electrode 150. Referring to FIG. 1, the spindirection of the electrons in the channel 120 is in the directiondenoted by the arrow A. The electron spin direction of the channel 120and the electron spin direction of the output electrode 150 may be inparallel with each other. Referring to FIG. 5, when a threshold voltage(e.g., about 0.5 V) is applied to the gate electrode 110, the conductionband of the up-spin electrons in the channel 120 may be aligned with theFermi level E_(F). Referring to FIG. 1, the spin direction of theelectrons in the channel 120 are in the direction denoted by the arrowB. The electron spin direction of the channel 120 and the electron spindirection of the output electrode 150 are anti-parallel with each other.The up-spin electrons of the source 130 may be transmitted through thechannel 120. The up-spin electron flow is decreased and/or rare to theoutput electrode 150, but up-spin electrons may flow to the drain 140.The current measured at the output electrode 150 may be low.

FIG. 6 is a truth table of the logic device shown in FIG. 1 illustratinginverter characteristics. The gate electrode 110 may be electricallyconnected to an input terminal and the output electrode 150 may beelectrically connected to an output terminal. Electric current detectedat the output electrode 150 is an output current (I_(out)). The outputcurrent I_(out) is converted into an output voltage V_(out) (shown inparenthesis). When a gate voltage Vg is greater than a threshold voltageV_(th), the spin electrons from the source 130 in the channel 120 maybecome parallel with the spin electrons of the drain 140 and may flow tothe drain 140. The output current I_(out) detected from the outputelectrode 150 may be a relatively low and/or decreased current I_(low).When the gate voltage Vg is lower than the threshold voltage V_(th)(e.g., a ground voltage V₀) the spin electrons from the source 130 inthe channel 120 may be parallel with the spin direction of the outputelectrode 150. The output current I_(out) detected from the outputelectrode 150 may be an increased and/or relatively high currentI_(high). The logic device 100 of the present embodiment may be aninverter circuit device. The inverter logic device 100 may have animproved and/or simple structure.

FIG. 7 is a cross-sectional diagram of a spin field effect logic devicethat may be operated as an inverter according to an example embodiment.Referring to FIG. 7, a gate electrode 210 on a gate oxide 212 and adrain 240 on a first tunnel barrier 221 may be on a first surface of achannel 220. A second tunnel barrier 222 may be on a second surface ofthe channel 220. A source 230 and an output electrode 250 may be on thesecond tunnel barrier 222 and may be separated from each other.Locations of the drain 240 and the output electrode 250, and locationsof the source 230 and the drain 240, may be different (e.g., swapped).

The gate electrode 210 may be a conductor (e.g., Al and/or polysilicon).The gate oxide 212 may be an oxide (e.g., silicon oxide). The firsttunnel barrier 221 and the second tunnel barrier 222 may be the same asa material that is between both magnetization layers in a TMR device.For example, the first tunnel barrier 221 and the second tunnel barrier222 may be MgO or AlOx (e.g., Al2O3). The source 230 may be a metallayer. When the source 230 is a general metal, densities of state (DOS)of an up-spin electron and a down-spin electron may be the same.

The drain 240 may be a magnetic material (e.g. a ferromagneticmaterial). The drain 240 may include a ferromagnetic layer 242 on thefirst tunnel barrier 221 and a metal layer 246 on the ferromagneticlayer 242. The drain 240 may further include an anti-ferromagnetic layer244 between the ferromagnetic layer 242 and the metal layer 246. Theanti-ferromagnetic layer 244 may fix a spin direction of spin-polarizedelectrons of the ferromagnetic layer 242. The output electrode 250 maybe a magnetic material, for example, a ferromagnetic material. Theoutput electrode 250 may include a ferromagnetic layer 252 on the secondtunnel barrier 222 and a metal layer 256 on the ferromagnetic layer 252.The output electrode 250 may include an anti-ferromagnetic layer 254between the ferromagnetic layer 252 and the metal layer 256.

The spin direction of the electrons in the drain 240 and the outputelectrode 250 may be dominant in different directions from each other.The channel 220 may be, for example, a half-metal. The spin field effectdevice 200 illustrated in FIG. 7 may include a field effect transistor.Operation of the spin field effect device 200 may be the same asoperation of the spin field effect device 100 and detailed operationaldescriptions are omitted.

FIGS. 8-10 are cross-sectional diagrams of a spin field effect logicdevice 300 and illustrate NAND operation of the device according to anexample embodiment. FIG. 11 is a truth table of the logic device shownin FIGS. 8-10 illustrating NAND characteristics. Referring to FIG. 8, agate oxide 312 may be on a gate electrode 310, a first channel 320 maybe on the gate oxide 312 and a first tunnel barrier 322 may be on thefirst channel 320. A source 330 and a second channel 360 may be on thefirst tunnel barrier 322 and may be separated from each other. A gateoxide 372 and a second tunnel barrier 362 may be on the second channel360 and may be separated from each other. A second gate electrode 370may be on the gate oxide 372 and a drain 340 may be on the second tunnelbarrier 362.

A ground voltage may be applied to the source 330. A first voltagesource 390 may be connected to the drain 340. An output line 380 may beconnected between the drain 340 and the first voltage source 390. Anoutput current I_(out) flowing from the source 330 to the drain 340 maybe measured at the output line 380. A first gate voltage V_(g1) may beapplied to the first gate electrode 310 and a second gate voltage V_(g2)may be applied to the second gate electrode 370.

The source 330 may include a ferromagnetic layer 332, ananti-ferromagnetic layer 334 on the ferromagnetic layer 332, a metallayer 336 on the anti-ferromagnetic layer 334, and the ferromagneticlayer 332 on the first tunnel barrier 322. The drain 340 may include aferromagnetic layer 342 on the second tunnel barrier 362, ananti-ferromagnetic layer 344 on the ferromagnetic layer 342, and a metallayer 346 on the ferromagnetic layer 344. The ferromagnetic layers 332and 342 of the source 330 and the drain 340 may include main spinelectrons which are magnetized in the same direction, for example, afirst direction. The first channel 320 and the second channel 360 may bea half-metal that selectively transmits spin electrons magnetized in asecond direction which is opposite to the first direction. When athreshold voltage V_(th1) is applied to the first gate electrode 310,the first channel 320 may selectively transmit spin electrons magnetizedin the first direction. When a second threshold voltage V_(th2) isapplied to the second gate electrode 370, the second channel 360 mayselectively transmits spin electrons magnetized in the first direction.When a first voltage V₁ is applied between the source 330 and the drain340, electrons injected from the source 330 may move to the drain 340via the first channel 320 and the second channel 360.

A resistance between the source 330 and the drain 340 may be the sum ofthe resistances between the source 330 and the first channel 320 andbetween the drain 340 and the second channel 360. The resistance betweenthe source 330 and the first channel 320 when the electron spindirections between the source 330 and the first channel 320 areanti-parallel with each other is a first resistance R1, and theresistance when the electron spin directions are parallel with eachother is a second resistance R2. The resistance between the drain 340and the second channel 360 when the electron spin directions between thedrain 340 and the second channel 360 are anti-parallel with each otheris a third resistance R3, and the resistance when the electron spindirections are parallel with each other is a fourth resistance R4. Thefirst resistance R1 may be greater than the second resistance R2. Thethird resistance R3 may greater than the fourth resistance R4. Aresistance 392 of the first voltage source 390 may be greater than a sumof the second resistance R2 and the fourth resistance R4, and smallerthan a sum of the first resistance R1 and the fourth resistance R4 or asum of the second resistance R2 and the third resistance R3.

Referring to FIG. 8, a first voltage V₁ (e.g., 1V) may be appliedbetween the source 330 and the drain 340, and a ground voltage mayapplied to the first and second gate electrodes 310 and 370. Because theresistance between the source 330 and the drain 340 is the sum of thefirst and third resistances R1 and R3, which is greater than theresistance 392 of the first voltage source 390, a first electric currentflowing from the source 330 to the drain 340 may lower than a secondelectric current flowing from the first voltage source 390, and theelectric current detected at the output line 380 may be the secondcurrent from the first voltage V₁. Referring to FIG. 11, the first andsecond gate electrodes 310 and 370 may be electrically connected tofirst and second input terminals respectively, and the output line 380may be electrically connected to an output terminal. First input voltageV_(input1) and second input voltage V_(input2) may be a low voltageV_(low), and output voltage V_(output) may become high voltage V_(high).

When a first gate voltage V_(g1) that is greater than the firstthreshold voltage V_(th1) is applied to the first gate electrode 310,the spin direction of the first channel 320 may be inverted as shown inFIG. 9. The resistance between the source 330 and the drain 340 may bethe sum of the second resistance R2 and the third resistance R3, whichis greater than the resistance 392. A second electric current may bedetected at the output line 380 that is a high electric current.Referring to FIG. 11, the first input voltage V_(input1) may be a highvoltage V_(high) and the second input voltage V_(input2) may be a lowvoltage V_(low), and the output voltage V_(output) may become highvoltage V_(high).

When the ground voltage is applied to the first gate electrode 310 andthe second gate voltage V_(g2) that is greater than the second thresholdvoltage V_(th2) is applied to the second gate electrode 370 (not shown),the spin direction of the second channel 360 may be inverted. Theresistance between the source 330 and the drain 340 may be the sum ofthe first resistance R1 and the fourth resistance R4, which may begreater than the resistance 392. The second electric current may bedetected at the output line 380 that is a high electric current.Referring to FIG. 11, the first input voltage V_(input1) may be a lowvoltage V_(low) and the second input voltage may be a high voltageV_(high), and the output voltage V_(output) may become high voltageV_(high).

Referring to FIG. 10, the first gate voltage V_(g1) that is greater thanthe first threshold voltage V_(th1) may be applied to the first gateelectrode 310 and the second gate voltage V_(g2) that is greater thanthe second threshold voltage V_(th2) may be applied to the second gateelectrode. The spin direction of the electrons being transmitted throughthe first channel 320 and the second channel 360 may be parallel withthat of the main spin electrons of the source 330 and the drain 340. Theresistance between the source 330 and the drain 340 may be the sum ofthe second and fourth resistances R2 and R4, which is lower than theresistance 392, and the first electric current flowing from the source330 to the drain 340 may be detected at the output line 380. The firstelectric current (I_(low)) may be higher than the second electriccurrent. Referring to FIG. 11, the first input voltage V_(input1) may bea high voltage V_(high) and the second input voltage V_(input2) may be ahigh voltage V_(high), and the output voltage V_(output) may become lowvoltage V_(low).

The first and second gate electrodes 310 and 370 may be electricallyconnected to first and second input terminals respectively, the outputline 380 may be electrically connected to an output terminal, and atruth table, as illustrated in FIG. 11, may be obtained. Operations ofthe NAND logic device 300 illustrated in FIG. 8 may be provided.

FIGS. 12-14 are perspective diagrams of a spin field effect logic device400 and illustrate AND operation of the device according to an exampleembodiment.

FIG. 15 is a truth table of the logic device of FIGS. 12-14 illustratingAND characteristics. Referring to FIG. 12, a first channel 420 and afirst tunnel barrier 422 may be on an insulating substrate 402. A source430, a second channel 442 and a third channel 452 may be on the firsttunnel barrier 422. A second tunnel barrier 444 and a first gate oxide412 may be on the second channel 442. A first drain 440 may be on thesecond tunnel barrier 444. A first gate electrode 410 may be on thefirst gate oxide 412. A third tunnel barrier 454 and a second gate oxide472 may be on the third channel 452. A second drain 450 may be on thethird tunnel barrier 454. A second gate electrode 470 may be on thesecond gate oxide 472. A first voltage source 490 may be connectedbetween the first drain 440 and the second drain 450 in parallel. Anoutput line 480 may be connected between the first voltage source 490and the first drain 440. Reference numeral 492 may denote a resistancebetween the first voltage source 490 and the output line 480. When themeasured current at the output line 480 is a current from the source430, the measured current may be a first current. When the measuredcurrent at the output line 480 is a current from the first voltagesource 490, the measured current may be a second current.

When the spin direction of the second channel 442 or the spin directionof the third channel 452 is parallel with the spin direction of thefirst channel 420, the resistance between the first channel 420 and thechannel 442 or 452 may be a first resistance. When the spin direction ofthe second channel 442 and the spin direction of the third channel 452is anti-parallel with the spin direction of the first channel 420, theresistance between the first channel 420 and the channel 442 and 452 maybe a second resistance. The first current may be set to be lower thanthe second current. The first channel 420 may be a half-metal and may bemagnetized so as to transmit spin electrons in a first direction. Thesecond channel 442 and the third channel 452 may transmit spin electronshaving the first direction. Operations of the logic device will now bedescribed with reference to FIGS. 12-15.

Referring to FIGS. 12 and 15, when a ground voltage is applied to thesource 430 and a ground voltage V_(o) or V_(low) is applied to the firstgate electrode 410 and the second gate electrode 470, and a firstvoltage V₁ is applied to the first voltage source 490, electrons fromthe source 430 may be transmitted through the channels 420, 442, and 452and flow to the drains 440 and 450. When the source 430 is a generalmetal, the amount of spin electrons having the first direction and theamount of spin electrons having the second direction may be about equalto each other. The spin electrons having the first direction may flow tothe first drain 440 and the second drain 450 via the channels 420, 442,and 452, and flow to the output line 480. The first current (low currentI_(low)) may be detected at the output line 480. The output line 480 maybe referred to as an output electrode.

When a first gate voltage V_(g1) that is greater than the firstthreshold voltage V_(th1) is applied to the first gate electrode 410,the direction of spin electrons of the second channel 442 may becomeanti-parallel with the direction of spin electrons of the first channel420 as shown in FIG. 13. The direction of the spin electrons of thethird channel 452 may be in parallel with that of the spin electrons ofthe first channel 420. When the first voltage V₁ is applied to the firstvoltage source 490, the spin electrons having the first direction fromthe source 430 may flow to the second drain 450 via the third channel452 having a low resistance and the first current may be detected at theoutput line 480. Conversely, when a second gate voltage V_(g2) which isgreater than the second threshold voltage V_(th2) is applied to thesecond gate electrode 470 and the ground voltage is applied to the firstgate electrode 410 (not shown), the spin electrons having the firstdirection from the source 430 may flow to the first drain 440 via thesecond channel 442 having a low resistance, and the first current may bedetected at the output line 480.

Referring to FIG. 14, when the first threshold voltage V_(th1) and thesecond threshold voltage V_(th2) are respectively applied to the firstgate electrode 410 and the second gate electrode 470, the spin electronshaving the first direction may not flow in the first and second channels442 and 452. The electric current from the first voltage source 490 mayflow to the output line 480, and the second current may be detected. Thesecond current may be greater than the first current.

Referring to FIG. 15, the first and second gate electrodes 410 and 470may be electrically connected to the first and second input terminals,the output line 480 may be electrically connected to the outputterminal, and a truth table, as illustrated in FIG. 15, may be obtained.Operation of the AND logic device 400 illustrated in FIG. 12 may beprovided.

FIGS. 16-18 are perspective diagrams of a spin field effect logic device500 and illustrate NOR operation of the device according to an exampleembodiment. FIG. 19 is a truth table of the logic device of FIGS. 16-18illustrating NOR characteristics. Referring to FIG. 16, a first tunnelbarrier 522 may be on a first channel 520 and the first channel 520 maybe on an insulating substrate 502. A source 530, a second channel 542and a third channel 552 may be on the first tunnel barrier 522. A secondtunnel barrier 544 and a first gate oxide 512 may be on the secondchannel 542. A first drain 540 may be on the second tunnel barrier 544.A first gate electrode 510 may be on the first gate oxide 512. A thirdtunnel barrier 554 and a second gate oxide 572 may be on the thirdchannel 552. A second drain 550 may be on the third tunnel barrier 554.A second gate electrode 570 may be on the second gate oxide 572. A firstvoltage source 590 may be connected between the first drain 540 and thesecond drain 550 in parallel. An output line 580 may be connectedbetween the first voltage source 590 and the first drain 540. Referencenumeral 592 may denote a resistance between the first voltage source 590and the output line 580. When the measured current at the output line580 is a current from the source 530, the measured current may be afirst current. When the measured current at the output line 580 is acurrent from the first voltage source 590, the measured current may be asecond current.

When the spin direction of the second channel 542 and the spin directionof the third channel 552 are anti-parallel with the spin direction ofthe first channel 520, the resistance between the first channel 520 andthe channel 542 or 552 is a first resistance. When the spin direction ofthe second channel 542 or the spin direction of the third channel 552 isparallel with the spin direction of the first channel 520, theresistance between the first channel 520 and the channels 542 or 552 maybe a second resistance. The first current may lower than the secondcurrent. The first channel 520 may be a half-metal and may be magnetizedso as to transmit spin electrons in a first direction. The secondchannel 542 and the third channel 552 are formed to transmit the spinelectrons having the second direction.

Operations of the logic circuit device 500 illustrated in FIG. 16-18will now be described with reference to the FIGS. 16-19. Referring toFIGS. 16 and 19, when a ground voltage is applied to the source 530 anda ground voltage V_(o) or V_(low), is applied to the first gateelectrode 510 and the second gate electrode 570 and a first voltage V₁is applied to the first voltage source 590, electrons from the source530 may be transmitted through the channels 520, 542, and 552 and flowto the first and second drains 540 and 550. When the source 530 is ageneral metal, the amount of spin electrons having the first directionand the amount of spin electrons having the second direction may beabout equal to each other. Since the spin electrons having the firstchannel 520 are anti-parallel with the spin electrons of the secondchannel 542 and the third channel 552, a resistance between the source530 and the drains 540 and 550 may be greater than the resistance 592.The second current from the first voltage source 590 may be detected atthe output line 580.

When a first gate voltage V_(g1) which is greater than the firstthreshold voltage V_(th1) is applied to the first gate electrode 510,the direction of spin electrons of the second channel 542 may becomeparallel with the direction of spin electrons of the first channel 520as shown in FIG. 17. When the first voltage V₁ is applied to the firstvoltage source 590, the spin electrons having the first direction fromthe source 530 may flow to the first drain 540 via the second channel542 having a low resistance, and the first current may be detected atthe output line 580. The first current may be lower than the secondcurrent. When a second gate voltage V_(g2) which is greater than thesecond threshold voltage V_(th2) is applied to the second gate electrode570 and the ground voltage is applied to the first gate electrode 510(not shown), the spin electrons having the first direction from thesource 530 may flow to the second drain 550 via the third channel 552having a low resistance, and the first current may be detected at theoutput line 580.

Referring to FIG. 18, when the first threshold voltage V_(th1) and thesecond threshold voltage V_(th2) are respectively applied to the firstgate electrode 510 and the second gate electrode 570, the spin electronshaving the first direction may flow in the first and second channels 542and 552, and the first current may be detected at the output line 580.Referring to FIG. 19, the first and second gate electrodes 510 and 570may be electrically connected to the first and second input terminals,the output line 580 may be electrically connected to the outputterminal, and a truth table, as illustrated in FIG. 19, may be obtained.Operation of the NOR logic device 500 illustrated in FIG. 16 may beprovided.

FIG. 20 is a perspective diagram of a spin field effect logic device andillustrates AND and NOR operation of the device according to an exampleembodiment. Referring to FIG. 20, a third gate oxide 604 may be on acontrol gate 602. A first channel 620 may be on the third gate oxide 604and a first tunnel barrier 622 may be on the first channel 620. A source630, a second channel 642, and a third channel 652 may be on the firsttunnel barrier 622. A second tunnel barrier 644 and a first gate oxide612 may be on the second channel 642. A first drain 640 may be on thesecond tunnel barrier 644. A first gate electrode 610 may be on thefirst gate oxide 612. A third tunnel barrier 654 and a second gate oxide672 may be on the third channel 652. A second drain 650 is formed on thethird tunnel barrier 654. A second gate electrode 670 is formed on thesecond gate oxide 672. A first voltage source 690 may be connected tothe first and second drain 640 and 650 in parallel. An output line 680may be connected between the first voltage source 690 and the firstdrain 640. Reference numeral 692 may denote a resistance between thefirst voltage source 690 and the output line 680.

The first channel 620 may be a half-metal, and may be magnetized so asto transmit spin electrons in a first direction. The second channel 642and the third channel 652 may transmit the spin electrons having thefirst direction. A third gate voltage V_(g3) which is greater than athird threshold voltage may be applied to the control gate 602. Thedirection of spin electrons of the first channel 620 may be inverted totransmit the spin electrons having the second direction. The firstchannel 620 may be anti-parallel with the second channel 642 and thethird channel 652. The logic device 600 may become a NOR logic devicethat is the same as logic device 500 illustrated in FIG. 16. When athird gate voltage V_(g3) which is smaller than the third thresholdvoltage is applied to the control gate 602, the first channel 620 may beparallel with the second channel 642 and the third channel 652. Thelogic device 600 may become an AND logic device that is the same as thelogic device 400 illustrated in FIG. 12. The logic device 600 may beconvertible between an AND logic device and a NOR logic device accordingto the third gate voltage Vg3.

While example embodiments have been particularly shown and described, itwill be understood by one of ordinary skill in the art that variationsin form and detail may be made therein without departing from the spiritand scope of the claims.

What is claimed is:
 1. A spin field effect logic device comprising: achannel including a magnetic material configured to selectively transmitspin-polarized electrons; a source on the channel; a gate electrode onthe channel; a drain electrode configured to output electronstransmitted from the source; an output electrode configured to outputelectrons transmitted from the source; a first voltage source connectedto the drain; a second channel on the channel, the drain on the secondchannel; and a second gate electrode on the second channel, wherein thesource is on the channel, the output electrode is connected between thedrain and the first voltage source, the source and the drain aremagnetized in a first direction, the gate and the second gate electrodesare configured to control a magnetization state of the channel and thesecond channel respectively, in order to selectively transmit electronsinjected from the source into the channel, and the channel and thesecond channel transmit the spin-polarized electrons which aremagnetized in a second direction, and wherein the logic device isconfigured such that when at least one of the channel and the secondchannel is magnetized in the second direction, a resistance between thesource and the output electrode is a first resistance, when both thechannel and the second channel are magnetized in the first direction,the resistance is a second resistance, and a resistance between thefirst voltage source and the output electrode is a third resistancehaving a magnitude between that of the first resistance and the secondresistance.
 2. The logic device of claim 1, further comprising: a firstinput terminal connected to the first gate electrode; a second inputterminal connected to the second gate electrode; and an output terminalconnected to the output electrode, wherein the logic device isconfigured such that when each of the first and second input terminalshas a potential about greater than or equal to a corresponding thresholdvoltage, the channel and the second channel transmit the electronsspin-polarized in the first direction and a first voltage related to afirst current from the source is output at the output terminal, when atleast one of the first and second input terminals has a potential whichis smaller than the corresponding threshold voltage, a second voltagerelated to a second current from the first voltage source is output, andthe second voltage is greater than the first voltage.
 3. The logicdevice of claim 1, further comprising: a first tunnel barrier betweenthe channel and the source, and between the channel and the secondchannel; and a second tunnel barrier between the second channel and thedrain, and between the second channel and the output electrode.
 4. Thelogic device of claim 3, wherein the channel and the second channel area half-metal.
 5. The logic device of claim 4, wherein each of the sourceand the drain includes a ferromagnetic layer on the first and secondtunnel barrier, respectively, and a metal layer formed on theferromagnetic layer.